| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be formed without an additional photolithography process being added and has a capacitor structure in which a drawing wiring is structured with a lot of flexibility. SOLUTION: A wiring groove (53B) is formed to reach a midpoint in the thickness direction of an interlayer dielctric on a semiconductor substrate, and a via hole (51B) is formed to extend from the bottom surface of the wiring groove to the bottom surface of the interlayer dielectric. A recess (55) for a capacitor is formed to reach the bottom surface of the interlayer dielectric. An insulating material (62B) is filled in the wiring groove and via hole. A capacitor (69) including a lower electrode (62A), a capacitor dielectric film (65A), and an upper electrode (68A), is filled in the recess for the capacitor. The lower electrode of the capacitor is formed of the same material as a conducting member, and is disposed along the bottom surface and side of the recess for the capacitor. The upper surface of the lower electrode is formed with a cavity, and the capacitor dielectric film covers the internal surface of the cavity. The upper electrode is filled in the cavity. COPYRIGHT: (C)2007,JPO&INPIT |
