| 摘要 |
The semiconductor device includes an active region, a recess channel region, a storage node junction region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate, wherein a lower part of sidewalls of the active region is recessed. The recess channel is formed in the semiconductor substrate under the active region, wherein the recess channel has a vertical channel region and a horizontal channel region. The storage node junction region is formed over the device isolation structure and the semiconductor substrate. The gate insulating film is formed over the active region including the recess channel region. The gate electrode is formed over the gate insulating film to fill up the recess channel region.
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