| 摘要 |
A method of fabricating a recess-gate transistor is provided. A first liner and a dielectric layer are formed on a substrate. An opening is formed in the first liner and dielectric layer. A second liner is formed on the dielectric layer and in the opening. The second liner is dry-etched to form a sidewall spacer in the opening. The substrate is recess etched to form a gate trench. A gate oxide layer is formed on in the gate trench. The gate trench is filled with gate material layer and then etched back. A capping metal layer and a dielectric cap layer are formed on the gate material layer. The dielectric layer is stripped.
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