发明名称 |
METHODS FOR PRODUCING ALUMINUM NITRIDE-CONTAINING FILM, GALLIUM NITRIDE-CONTAINING FILM, ALUMINUM GALLIUM NITRIDE-CONTAINING FILM, AND ALUMINUM GALLIUM INDIUM NITRIDE-CONTAINING FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride-containing film, with high productivity and at a low cost. SOLUTION: The method for producing the aluminum nitride-containing film includes: a process for forming a boron nitride film 2 on a substrate 1; a process for forming an aluminum film 3 on the boron nitride film 2; and a process for forming the aluminum nitride-containing film 4 on the substrate 1 by heat-treating the aluminum film 3 and the boron nitride film 2 in a nitrogen atmosphere to melt the aluminum film 3. By the method for producing the aluminum nitride-containing film, the nitridation reaction of aluminum proceeds by the solid-liquid reaction of the boron nitride 2 and the molten aluminum film 3, and the aluminum nitride-containing film 4 is formed. COPYRIGHT: (C)2007,JPO&INPIT
|
申请公布号 |
JP2007186350(A) |
申请公布日期 |
2007.07.26 |
申请号 |
JP20060003254 |
申请日期 |
2006.01.11 |
申请人 |
TAMA TLO KK |
发明人 |
OTSUKA KANJI;KIYOMIYA YOSHIHIRO;TAKANO YOSHIKAZU |
分类号 |
C30B29/38 |
主分类号 |
C30B29/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|