发明名称 METHODS FOR PRODUCING ALUMINUM NITRIDE-CONTAINING FILM, GALLIUM NITRIDE-CONTAINING FILM, ALUMINUM GALLIUM NITRIDE-CONTAINING FILM, AND ALUMINUM GALLIUM INDIUM NITRIDE-CONTAINING FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride-containing film, with high productivity and at a low cost. SOLUTION: The method for producing the aluminum nitride-containing film includes: a process for forming a boron nitride film 2 on a substrate 1; a process for forming an aluminum film 3 on the boron nitride film 2; and a process for forming the aluminum nitride-containing film 4 on the substrate 1 by heat-treating the aluminum film 3 and the boron nitride film 2 in a nitrogen atmosphere to melt the aluminum film 3. By the method for producing the aluminum nitride-containing film, the nitridation reaction of aluminum proceeds by the solid-liquid reaction of the boron nitride 2 and the molten aluminum film 3, and the aluminum nitride-containing film 4 is formed. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007186350(A) 申请公布日期 2007.07.26
申请号 JP20060003254 申请日期 2006.01.11
申请人 TAMA TLO KK 发明人 OTSUKA KANJI;KIYOMIYA YOSHIHIRO;TAKANO YOSHIKAZU
分类号 C30B29/38 主分类号 C30B29/38
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