| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a high quality semiconductor light emitting element capable of effectively taking out the light from a light emitting layer of the semiconductor light emitting element, with an electrode comprising a silver or a silver alloy having a high reflection efficiency contacted and formed on a nitride semiconductor layer without lowering the reflection efficiency at the silver or the silver alloy electrode and with exerting further high reflection efficiency. <P>SOLUTION: The method for manufacturing the semiconductor light emitting element comprises the steps of depositing a first and a second nitride semiconductor layer having the light emitting structure, forming a second electrode including the silver on the surface of the second nitride semiconductor layer, exposing a part of the first nitride semiconductor layer from the second nitride semiconductor layer, and moving a part of the silver comprising the second electrode to the exposed part of the first nitride semiconductor layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
