METHOD OF FABRICATING ONE-TRANSISTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a uniform seed for MOCVD metal oxide ferroelectric thin film formation. SOLUTION: A method of fabricating a one-transistor memory, comprising: a step of preparing a single crystal silicon substrate; a step of forming a device area on the substrate; a step of growing a gate oxide layer on the surface of the substrate; a step of depositing a bottom electrode structure on the gate oxide layer; a step of implanting ions to form a source region and a drain region and activating the implanted ions; a step of spin-coating the structure with a first ferroelectric layer having a thickness of between about 5 nm and 100 nm; a step of depositing a second ferroelectric layer to a thickness of between about 50 nm and 300 nm; a step of annealing the structure to provide a c-axis oriented ferroelectric; a step of etching the structure to remove excess ferroelectric material; a step of depositing a protective layer; a step of depositing a layer of silicon oxide; and a step of metallizing the structure. COPYRIGHT: (C)2007,JPO&INPIT