发明名称 |
Verfahren zur Abscheidung von dünnen Schichten unter Verwendung eines FTIR-Gasanalysators und einer Mischgasversorgungsvorrichtung |
摘要 |
<p>This invention provides a thin film depositing process making it possible to form a thin film having a desired composition with good reproducibility and high efficiency; a device therefor; an FTIR gas analyzer used in the thin film depositing process; and a mixed gas supplying device used in the thin film depositing process. In this invention, a thin film depositing process comprises the steps of mixing plural organic metal gases in a gas mixing chamber and supplying the mixed gas into a reaction chamber to deposit a thin film on a substrate set up in the reaction chamber, wherein the mixture ratio between/among the organic metal gases supplied into the gas mixing chamber is measured with an FTIR gas analyzer fitted to the gas mixing chamber and then on the basis of results of the measurement the flow rates of the organic metal gases are individually adjusted. <IMAGE></p> |
申请公布号 |
DE60128846(D1) |
申请公布日期 |
2007.07.26 |
申请号 |
DE2001628846 |
申请日期 |
2001.02.28 |
申请人 |
HORIBA LTD. |
发明人 |
SATAKE, TSUKASA;TOMINAGA, KOJI;FUNAKUBO, HIROSHI |
分类号 |
C30B25/16;C23C16/40;C23C16/44;C23C16/455;C23C16/52;G01N21/35;G01N21/3504;H01L21/205;H01L21/31 |
主分类号 |
C30B25/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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