| 摘要 |
PROBLEM TO BE SOLVED: To prevent aged deterioration of leak current between wiring lines (BTS failure), and to reduce an operation failure of a semiconductor device. SOLUTION: In a manufacturing method of the semiconductor device having Cu groove wiring in an interlayer insulating film; height of a barrier metal face on a surface is made lower than a Cu face, and a recess 101 is formed. A barrier insulating film with respect to Cu is deposited so that the recess 101 is completely embedded. Thus, a leak path 6 between wiring lines becomes longer than a conventional case since a barrier metal region is removed on a surface of wiring. The insulating film in the recess 101 is not damaged by CMP. Thus, there is little defect causing leak. Consequently, the BTS failure is prevented and the operation failure of the semiconductor device can be reduced. COPYRIGHT: (C)2007,JPO&INPIT
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