发明名称 |
METAL JUNCTION DIODE AND PROCESS |
摘要 |
A junction diode includes a substrate having first and second cathode regions separated by an anode region. Metal silicide layers contact the first and second cathode regions and the anode region. The anode region has a doping concentration sufficient to create a depletion region in the anode region adjacent to the metal silicide layer contacting the anode region. A fabrication process includes forming the anode region to have a doping concentration that increases in a direction into the anode region away from the substrate surface.
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申请公布号 |
WO2006078410(A3) |
申请公布日期 |
2007.07.26 |
申请号 |
WO2005US46429 |
申请日期 |
2005.12.21 |
申请人 |
LATTICE SEMICONDUCTOR CORPORATION |
发明人 |
CHONG, NUI;OMID-ZOHOOR, FARROKH |
分类号 |
H01L29/36 |
主分类号 |
H01L29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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