| 摘要 |
An atomic layer deposition apparatus and a method for fabricating a semiconductor device using the same are provided to protect a substrate and a thin film from being damaged against plasma at an initial stage of deposition. A semiconductor substrate(110) is seated on a heater(150), and a plasma device(160) is provided on an upper portion of the heater. A distance between the plasma device and the semiconductor substrate is adjusted by a distance adjusting member. A controller determines whether the semiconductor substrate is damaged by the plasma device. If the semiconductor substrate is damaged, the distance is extended by the distance adjusting member.
|
