| 摘要 |
<P>PROBLEM TO BE SOLVED: To inexpensively provide a radiation detecting element array having a radiation sensitive layer produced on a large area and optimum deposition condition. <P>SOLUTION: A half-insulating compound semiconductor film 4 such as CdTe, CdZnTe, GaAs or HgI2 is formed on the surface of a hard conductive plate 1 of Si or the like having an electrode 3 on both sides or only backside using a gas phase deposition method such as CVD or evaporation. Next, a plurality of signal extracting electrodes 5 are formed on the half-insulating compound semiconductor film, and are cut into a predetermined size to form a radiation detecting element array chip 6. <P>COPYRIGHT: (C)2007,JPO&INPIT |
