| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which floating effect of substrate can be suppressed. SOLUTION: The semiconductor device comprises a first conductivity type first semiconductor layer 33 formed on a first insulation film 31, a second conductivity type second semiconductor layer 32 formed between the first semiconductor layers 33, a second conductivity type third semiconductor layer 32 touching the second semiconductor layer 32, a gate electrode 20 formed on the second semiconductor layer 32, a first wiring layer 21 formed on the third semiconductor layer 32 and connecting the gate electrodes 20 commonly, a second conductivity type fourth semiconductor layer 32 touching the third semiconductor layer 32, a second conductivity type fifth semiconductor layer 23 touching the fourth semiconductor layer 32 and isolated from the first through third semiconductor layers 32 and 33 by the fourth semiconductor layer 32, and a second wiring layer 22 formed on fourth semiconductor layer 32 wherein the longitudinal length of the fourth semiconductor layer 32 is shorter than the longitudinal length of the third semiconductor layer 32. COPYRIGHT: (C)2007,JPO&INPIT
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