| 摘要 |
1,203,256. Semi-conductor device. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 18 Oct., 1967 [21 Oct., 1966], No. 47386/67. Heading H1K. An insulated gate field effect transistor has conductive screening layers 45, 46, at least partly under the portions of a surface insulating layer 2 beneath the metal layers 37, 38 which connect the source and drain zones 34, 35 with their associated external electrical conductors. These screening layers are separated from the subjacent regions of the semi-conductor body by barrier layers and are provided with electrical conductors. Each screen may be in the' form of a surface zone 45, 46, forming a PN junction with the subjacent region, as shown, or may be in the form of a metal layer separated from the semi-conductor body by a barrier layer of insulating material. Highly doped zones 53, 54, of the same conductivity type as the substrate 3 are provided between the screening layers and the source and drain zones to prevent unwanted field effects. The substrate region may be provided with an electrically conducting layer 22. The semi-conductor material used is silicon with silicon oxide as the insulating layer, the dopants used being B 2 O 3 and phosphorus. The metal layers are aluminium and the conducting layer 22 on the substrate is a goldplated iron-nickel-cobalt alloy such as Fernico. When a metal screening layer is used, the associated insulating barrier layer is of silicon oxide or silicon nitride. Two configurations of the device are described, together with examples of circuit configurations showing the various connections of the screening layers. |
