| 摘要 |
A semiconductor device with a metal fuse is provided to prevent the generation of dishing by forming divided fuse regions and to prevent the increase of a chip size by omitting dummy isolation regions between the divided fuse regions. A semiconductor device includes a semiconductor substrate with fuse regions(11), a trench dummy isolation region(18) on the substrate, a plurality of first dummy device regions and a plurality of metal fuses. The plurality of first dummy device regions are formed on the substrate. The first dummy device regions are enclosed with the trench dummy device isolation region. The plurality of metal fuses are formed within the fuse regions through an interlayer dielectric. The first dummy device regions are formed at least a portion under the metal fuses. |
