| 发明名称 |
SOLDERABLE TOP METAL FOR SIC DEVICE |
| 摘要 |
A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap. |
| 申请公布号 |
EP1810338(A2) |
申请公布日期 |
2007.07.25 |
| 申请号 |
EP20050817063 |
申请日期 |
2005.10.21 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
CARTA, ROSSANO;BELLEMO, LAURA;MERLIN, LUIGI |
| 分类号 |
H01L29/15;H01L23/31 |
主分类号 |
H01L29/15 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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