| 摘要 |
A method for fabricating a semiconductor device is provided to form a hard mask for fine patterns by patterning a preliminary hard mask having a multi-layered structure. First etch mask patterns are formed on an etch target layer(21), the etch mask patterns including a first hard mask(22), a first pad layer, and a second pad layer. Spacers are formed on both sidewalls of the etch mask pattern. The spacers consist of the same material that the first pad layer does A second hard mask(27) is formed on the resulting structure until gaps between the etch mask patterns are filled. The second hard mask is planarized until the first pad layer is exposed, and then the first pad layer and the spacers are removed. The etch target layer is etched using the remaining first and second hard masks as an etch barrier layer. |
