发明名称
摘要 A method for fabricating a semiconductor device includes mountain a first semiconductor chip on a wiring substrate, bonding a spacer having a first main surface and a second main surface opposing the first main surface such that the first main surface is in contact with the first semiconductor chip. The method further includes bonding a second semiconductor chip having a surface, onto the second main surface via a layer of a die bonding material selectively formed on a part of a third main surface.
申请公布号 JP3949665(B2) 申请公布日期 2007.07.25
申请号 JP20040048266 申请日期 2004.02.24
申请人 发明人
分类号 H01L23/12;H01L25/18;H01L21/301;H01L21/58;H01L21/68;H01L21/98;H01L23/58;H01L25/065;H01L25/07 主分类号 H01L23/12
代理机构 代理人
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