| 摘要 |
A capacitor of the device C is encapsulated by a multilayer encapsulation layer EL comprising a blocking layer 130 (which may be TiO<SB>2</SB>, Ta<SB>2</SB>O<SB>5</SB>, BaTiO<SB>3</SB>, SrTiO<SB>3</SB>, Bi<SB>4</SB>Ti<SB>3</SB>O<SB>12</SB>, PbTiO<SB>3</SB>) and a protection layer 132 (which may be Al<SB>2</SB>O<SB>3</SB>, TiO<SB>2</SB>, Ta<SB>2</SB>O<SB>5</SB>, BaTiO<SB>3</SB>, SrTiO<SB>3</SB>, Bi<SB>4</SB>Ti<SB>3</SB>O<SB>12</SB>, PbTiO<SB>3</SB>). The capacitor may be a ferroelectric capacitor with possible dielectric materials given. Additionally the device ,ay comprise a hydrogen barrier layer 140 formed between the capacitor and a passivating layer 138. The hydrogen barrier layer may be one of Al<SB>2</SB>O<SB>3</SB>, TiO<SB>2</SB>, Ta<SB>2</SB>O<SB>5</SB>, BaTiO<SB>3</SB>, SrTiO<SB>3</SB>, Bi<SB>4</SB>Ti<SB>3</SB>O<SB>12</SB>,PbTiO<SB>3</SB>. The conductive plug 120 may be provided with a cobalt silicide interface layer or the lower capacitor electrode may be formed from cobalt silicide. |
