发明名称 |
Method of fabricating a field effect transistor having improved junctions |
摘要 |
A method of forming a field effect transistor is provided which includes forming an amorphized semiconductor region having a first depth from a single-crystal semiconductor region and subsequently forming a first gate conductor above a channel portion of the amorphized semiconductor region. A first dopant including at least one of an n-type dopant and a p-type dopant is then implanted to a second depth into portions of the amorphized semiconductor region not masked by the first gate conductor to form source/drain portions adjacent to the channel portion. The substrate is then heated to recrystallize the channel portion and the source/drain portions of the amorphized semiconductor region. After the heating step, at least a part of the recrystallized semiconductor region is locally heated to activate a dopant in at least one of the channel portion and the source/drain portion.
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申请公布号 |
US7247547(B2) |
申请公布日期 |
2007.07.24 |
申请号 |
US20050905454 |
申请日期 |
2005.01.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;GLUSCHENKOV OLEG;SUNG CHUN-YUNG |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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