| 摘要 |
An apparatus for dry-etching a semiconductor is provided to obtain a uniform gas flow in a process chamber by making gas flow as a concentric circle type with respect to the center of a wafer in the process chamber. A gas injector is installed on the lateral surface of a process chamber(120) in a manner that gas flows in a circumferential direction. The circumferential direction can be a concentric direction with respect to the center of the wafer. A plurality of gas injectors(140a,140b,140c,140d) can be installed at regular intervals on the lateral surface of the process chamber.
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