| 摘要 |
A process chamber of heat treatment equipment is provided to effectively control transformation of the air current of the process gas into vortex such that the air current is introduced into a process chamber, by preventing formation of a step between an opening of the process chamber and a stage or by introducing a vortex preventing member when a stepped portion exists. A stage(212) on which a semiconductor substrate is placed is received in a chamber body(210) whose upper part is opened wherein an opening(216) through which process is introduced is formed in one side of the chamber body. A cover is connected to the chamber body in a manner that covers the upper part of the chamber body, including a heating unit(232) for heating the semiconductor substrate. The bottom surface(216a) of the opening formed in the chamber body is formed on substantially the same plane as the upper surface(212a) of the stage. The opening can be made of a slit shape extended in a horizontal direction.
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