发明名称 |
Three dimensional programmable device and method for fabricating the same |
摘要 |
A three-dimensional memory device having polycrystalline silicon diode isolation elements for phase change memory cells and method for fabricating the same. The memory device includes a plurality of stacked memory cells to form a three-dimensional memory array. The polycrystalline silicon diode element selects the phase change memory cell. The memory device is fabricated by forming a plurality of phase change memory cells and diode isolation elements on a base layer. Additional layers of memory cells and isolation elements are formed over the initial layer.
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申请公布号 |
US7247876(B2) |
申请公布日期 |
2007.07.24 |
申请号 |
US20020231974 |
申请日期 |
2002.08.30 |
申请人 |
INTEL CORPORATION |
发明人 |
LOWREY TYLER A. |
分类号 |
H01L47/00;G11C16/02;H01L27/24;H01L29/06;H01L31/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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