METHOD FOR STRIP OF PHOTORESIST USED BARRIER WHEN HIGE DOSE IMPLANT

摘要

A method for stripping a photoresist layer used as a barrier of a high dose ion implantation is provided to clearly strip a photoresist pattern and to prevent a pattern defect such as a lifting after a gate patterning by using plasma of a mixture gas of nitrogen and hydrogen. A photoresist pattern(26) is formed on a material layer to open a portion of the material layer where an ion implantation is to be performed. Impurities are ion-implanted into the portion of the material layer where the ion implantation is to be performed by using the photoresist pattern as an ion implantation barrier. The photoresist pattern is stripped by using plasma of a mixture gas of nitrogen and hydrogen. After a stripping using the plasma of the mixture gas of the nitrogen and the hydrogen, a stripping is performed by using plasma of a mixture of the nitrogen and oxygen.