发明名称 METHOD OF MANUFACTURING LIGHT EMITTING DIODE
摘要 A method for fabricating an LED is provided to improve process efficiency by simultaneously forming transparent electrodes connected to positive and negative terminals. A light emitting structure(123) is formed on a substrate(100), including a semiconductor layer of a first conductivity type, a light emitting active layer partially exposing the semiconductor layer of the first conductivity type, and a semiconductor layer of a second conductivity type. The light emitting structure is covered with a passivation layer having first and second openings respectively exposing the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type. First and second electrodes are simultaneously formed in the first and second openings, coming in contact with the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type. The process for forming the passivation layer includes the following steps. An insulation layer is conformally formed on the light emitting structure. The insulation layer is selectively patterned to partially expose the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type.
申请公布号 KR100744024(B1) 申请公布日期 2007.07.24
申请号 KR20070040606 申请日期 2007.04.26
申请人 EPIPLUS CO., LTD. 发明人 PARK, HYEONG SOO
分类号 H01L33/44;H01L33/36 主分类号 H01L33/44
代理机构 代理人
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