发明名称 Magnetic random access memory array with coupled soft adjacent magnetic layer
摘要 An MTJ element (10) is formed between orthogonal word (20) and bit lines (30). The bit line (30) is a composite line which includes a high conductivity layer (34) and a soft magnetic layer (32) under the high conductivity layer (34). During operation, the soft magnetic layer (32) concentrates the magnetic field of the current and, due to its proximity to the free layer (70), it magnetically couples with the free layer (70) in the MTJ (10). This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer (70) during formation.
申请公布号 KR100741303(B1) 申请公布日期 2007.07.23
申请号 KR20050053650 申请日期 2005.06.21
申请人 发明人
分类号 H01L27/115;A61K31/404;C07D209/08;G11C11/16;H01L27/22;H01L43/08 主分类号 H01L27/115
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