SEMICONDUCTOR MEMBER AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor member having low dislocation density of a surface by preventing intersecting between crystal growth from a convex portion of a substrate having unevenness and crystal growth from a concave portion.

SOLUTION: This manufacturing method includes a preparing process of preparing a substrate 30 having the concave portion 30r and the convex portion 30p; a first growing process of growing a first semiconductor 31 in at least a lateral direction from the convex portion 30p; a second growing process of growing a second semiconductor 32 on the first semiconductor 31 to form a facet consisting of the second substrate 32; and a third growing process of growing a third semiconductor 33 in at least a lateral direction from the facet.

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