| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which hardly has the occurrence of depoling field in a ferroelectric film and can retain data stably, over a long period of time. SOLUTION: The semiconductor memory device comprises a first electrode film 16 formed on a substrate 11, a multilayer film 18 consisting of a ferroelectric film 15, and an insulating film 12 which are laminated on the first electrode film; and a second electrode film 17 selectively formed on the multilayer film 18. In the regions, on both sides of the top face of the film in contact with the first electrode film 16 out of the multilayer film 18 with the second electrode film 17 in-between, a source electrode 12 and a drain electrode 13 are formed in contact with the ferroelectric film 15, respectively. The first electrode film 16 and the second electrode film 17 are formed of materials having different work functions. COPYRIGHT: (C)2007,JPO&INPIT
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