| 摘要 |
An interconnecting process is described. First, a dielectric layer with a plurality of openings is provided. Then, a metallic layer is formed to fill up the openings. A first dielectric barrier layer is formed to cover the dielectric layer and the metallic layer. Thereafter, a second dielectric barrier layer is formed over the first dielectric barrier layer. The second dielectric barrier layer is used to repair the first dielectric barrier layer and improve the reliability and yield of the process.
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