| 摘要 |
A non-volatile memory device includes a plurality of select lines and a plurality of word lines formed over a semiconductor substrate, a contact plug formed between the select lines, and a conductive interference shielding line formed between the select line and a word line adjacent to the select line and isolated from the semiconductor substrate. A method of manufacturing a non-volatile memory device includes the steps of providing a semiconductor substrate in which a plurality of select lines and a plurality of word lines are formed, forming a first insulating layer over the semiconductor substrate including the select lines and the word lines, removing the first insulating layer between the select lines, forming a conductive interference shielding line over the first insulating layer between the select line and a word line adjacent to the select line, forming a second insulating layer over the semiconductor substrate including the conductive interference shielding line, etching the second insulating layer to expose the semiconductor substrate and the conductive interference shielding line between the select lines, thus forming a contact hole, and forming a contact plug within the contact hole.
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