发明名称 |
Methods for symmetric deposition of a metal layer in the fabrication of a semiconductor device |
摘要 |
A method for symmetric deposition of metal layer over a metal layer registration key comprises using MOCVD to form the metal layer. Once the symmetric metal layer is formed, a metal layer registration key can be accurately detected and the metal layer registration key overlay shift can be improved.
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申请公布号 |
US2007167007(A1) |
申请公布日期 |
2007.07.19 |
申请号 |
US20060334610 |
申请日期 |
2006.01.18 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HSIEH SHENG-HUI;YANG LING-WUU;HUANG CHI-TUNG;CHEN KUANG-CHAO |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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