发明名称 Methods for symmetric deposition of a metal layer in the fabrication of a semiconductor device
摘要 A method for symmetric deposition of metal layer over a metal layer registration key comprises using MOCVD to form the metal layer. Once the symmetric metal layer is formed, a metal layer registration key can be accurately detected and the metal layer registration key overlay shift can be improved.
申请公布号 US2007167007(A1) 申请公布日期 2007.07.19
申请号 US20060334610 申请日期 2006.01.18
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 HSIEH SHENG-HUI;YANG LING-WUU;HUANG CHI-TUNG;CHEN KUANG-CHAO
分类号 H01L21/44 主分类号 H01L21/44
代理机构 代理人
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