| 摘要 |
A semiconductor process and apparatus provide a polysilicon structure ( 10 ) and source/drain regions ( 12, 14 ) formed adjacent thereto in which a dual silicide scheme is used to form first silicide regions in the polysilicon, source and drain regions ( 30, 32, 34 ) using a first metal (e.g., cobalt). After forming sidewall spacers ( 40, 42 ), a second metal (e.g., nickel ) is used to form second silicide regions in the polysilicon, source and drain regions ( 60, 62, 64 ) to reduce encroachment by the second silicide in the source/drain ( 62, 64 ) and to reduce resistance in the polysilicon structure caused by agglomeration and voiding from the first silicide ( 30 ).
|
