EPITAXIAL GROWTH OF ALIGNED ALGAINN NANOWIRES BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

摘要

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/A1N trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M­plane AIN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self­ aligned nanowire devices, interconnects, and networks.