发明名称 |
Apparatus for producing silicon single crystal |
摘要 |
A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.
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申请公布号 |
US5471949(A) |
申请公布日期 |
1995.12.05 |
申请号 |
US19940330785 |
申请日期 |
1994.10.28 |
申请人 |
SUMITOMO SITIX CORPORATION |
发明人 |
KURAMOCHI, KAORU;ITO, MAKOTO;KITAURA, KIICHIRO |
分类号 |
C30B15/22;C30B15/00;C30B15/12;H01L21/208;(IPC1-7):C30B35/00 |
主分类号 |
C30B15/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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