| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile carbon nanotube memory element using a multiple wall carbon nanotube, and also to provide its operating method. <P>SOLUTION: The nonvolatile memory element includes: a first electrode formed on a substrate; a first and a second vertical walls which are isolated and formed on the first electrode; the multiple wall carbon nanotube which is between the first vertical wall and the second vertical wall, and is formed on the first electrode; a second and a third electrode which are formed on the first and the second vertical walls, respectively; and a fourth electrode formed at an upper side of the multiple wall carbon nanotube. Thereby a plurality of the first electrodes are formed at the nonvolatile memory element at equal intervals, a plurality of the fourth electrodes are formed in such a direction as intersecting the first electrodes, and a plurality of the vertical walls including the first and the second vertical walls are formed in parallel with the fourth electrodes while intersecting the first electrodes. The second electrode on one vertical wall of two vertical walls, and the third electrode on the rest vertical wall are connected by wiring. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
