| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device including 3-dimensional cell arrays to reduce a chip size. <P>SOLUTION: The nonvolatile semiconductor memory device includes a unit block cell array including a plurality of vertically multi-layered cell arrays each including a plurality of unit cells arranged in row and column directions. One unit bank cell array is composed of the unit block cell arrays of a specified group unit arranged in X, Y and Z-directions by defining the layered direction of the plurality of cell arrays as a reference. Each unit bank cell array independently performs a reading/writing operation. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
