| 摘要 |
Semiconductor memory devices 10 are each furnished with a memory array 100 having an EEPROM array 101 and a mask ROM array 102 . Identifying information for identifying each semiconductor memory device 10 is stored at the beginning three addresses of the EEPROM array 101 . 8-bit data relating to ink level is stored at the ninth address to sixteenth address of the EEPROM array 101 . The seventeenth address to the twenty-fourth address of the EEPROM array 101 is provided with a usage history information storage area for storing 8-bit usage history information that is rewriteable under certain conditions.
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