发明名称 |
Method for fabricating a body contact in a Finfet structure and a device including the same |
摘要 |
A method for fabricating a Finfet device with body contacts and a device fabricated using the method are provided. In one example, a silicon-on-insulator substrate is provided. A T-shaped active region is defined in the silicon layer of the silicon-on-insulator substrate. A source region and a drain region form two ends of a cross bar of the T-shaped active region and a body contact region forms a leg of the T-shaped active region. A gate oxide layer is grown on the active region. A polysilicon layer is deposited overlying the gate oxide layer and patterned to form a gate, where an end of the gate partially overlies the body contact region to complete formation of a Finfet device with body contact.
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申请公布号 |
US7244640(B2) |
申请公布日期 |
2007.07.17 |
申请号 |
US20040968229 |
申请日期 |
2004.10.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YANG KUO-NAN;CHEN YI-LANG;CHEN HOU-YU;YANG FU-LIANG;HU CHENMING |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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