发明名称 |
Selective etching of organosilicate films over silicon oxide stop etch layers |
摘要 |
A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.
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申请公布号 |
US7244672(B2) |
申请公布日期 |
2007.07.17 |
申请号 |
US20050075903 |
申请日期 |
2005.03.09 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NGUYEN HUONG THANH;BARNES MICHAEL SCOTT;XIA LI-QUN;NAIK MEHUL |
分类号 |
H01L21/4763;H01L21/311;H01L21/312;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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