发明名称 Methods for reducing delamination during chemical mechanical polishing
摘要 Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.
申请公布号 US7244168(B2) 申请公布日期 2007.07.17
申请号 US20060393278 申请日期 2006.03.30
申请人 APPLIED MATERIALS, INC. 发明人 CHEN YUFEI;SUN LIZHONG;LEE DOOHAN;HSU WEI-YUNG
分类号 B24B1/00;B24B37/04;H01L21/02;H01L21/321 主分类号 B24B1/00
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