| 摘要 |
A method of manufacturing a thin film transistor. A gate electrode is formed on a substrate. Then a first gate insulation layer is formed on the gate electrode and on the substrate. The first gate insulation layer is then cleaned to remove contaminates. After cleaning, a second gate insulation layer is then formed on the first gate insulation layer. Beneficially, the first and second gate insulation layers are of the same material. An active layer having an ohmic contact layer is then formed on the second insulation layer. Spaced apart source and drain electrodes are then formed on the ohmic contact. |
