| 摘要 |
A semiconductor chip having a chip pad structure with improved structural strength is provided to increase the structural strength of an interlayer dielectric with respect to the external weight applied to a conductive pad by forming a contact plug and a metal interconnection layer under a peripheral part of the conductive pad and by interconnecting a plurality of interlayer dielectrics through a center part of the pad. A semiconductor device is formed on a semiconductor substrate(Sub). The semiconductor device is electrically connected by a plurality of metal interconnection layers(M1,M2). A plurality of interlayer dielectrics are interposed between the semiconductor device and the metal interconnection layer and between the plurality of metal interconnection layers. A conductive pad is formed on the uppermost interlayer dielectric, electrically connected to an external circuit. The conductive pad is defined as a pad center part(220) and a pad peripheral part(240). At least one of the plurality of metal interconnection layers are formed under the conductive pad overlaps the lower part of the pad peripheral part except the pad center part. Two interlayer dielectrics formed in the upper and lower portions of the metal interconnection layer formed under the pad peripheral part are interconnected through the lower region of the pad center part. The metal interconnection layer formed in the pad peripheral part can be disposed in the uppermost layer of the plurality of metal interconnection layers. |
