| 摘要 |
A dual-damascene process using polymer is provided to protect a via hole and a lower metallization by forming a byproduct which is formed in an etching process chamber when the via hole is formed, in the via hole. A capping layer and an interlayer dielectric(130) are formed on a semiconductor substrate, and a first photoresist pattern(162) is formed on the interlayer dielectric. The interlayer dielectric is etched to form a via hole(140) through dry etching, and a byproduct(150) which is obtained at the etching step is formed in the via hole. The first photoresist pattern is removed by an ashing process, and then a second photoresist pattern is formed on the interlayer dielectric. The interlayer dielectric is etched by drying etching to form a trench, and then the second photoresist pattern and the byproduct are removed by the ashing process.
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