| 摘要 |
A method for fabricating a capacitor using SIP is provided to obtain a desired capacitance value by simply designing and processing a semiconductor device and by enabling formation of a library of capacitors. A silicon substrate(100) is patterned to form a first through hole. After a barrier metal(102) is deposited on the inner wall of the first through hole, a metal material is filled and planarized to form a first through electrode(104). A first insulation layer(106) is deposited on the resultant structure and is patterned to form a second through hole and a bottom electrode hole such that the second through hole is aligned with the first through hole. After a barrier metal is deposited on the inner wall of the second through hole and the bottom electrode hole, a metal material is filled and planarized to form a second through electrode(108) and a bottom electrode(110). An insulation layer(112) for a capacitor is deposited on the first insulation layer. A second insulation layer(114) for forming a top electrode is deposited on the insulation layer for the capacitor. The second insulation layer is patterned to form a plurality of top electrode holes. After a barrier metal is deposited on the inner wall of the top electrode hole, a metal material is filled and planarized to form a top electrode(116). A passivation layer(118) is deposited on the second insulation layer, and the first through electrode is exposed to the lower part of the substrate by a back grinding process.
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