| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a row decoder circuit preventing a leakage current and a semiconductor memory device provided with the same. <P>SOLUTION: The row decoder of the semiconductor memory device is provided with an address decoding part and a selection signal generating part. The selection signal generating part electrically breaks a path between a boosted voltage node and an output node and a path between the boosted voltage node and a ground voltage node when an enable signal output from the address decoding part is deactivated. A DC path breaking part included in a block selection signal generating part turns off a switch when the enable signal is deactivated. Accordingly, even when a supply voltage level applied to the semiconductor memory device is relatively low, a DC path is broken in the decoder circuit, thereby preventing the leakage current. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
