| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain the propagation rate with little scattering while there are few defects or the like in the crystal in a manufacture method of a board for a piezoelectric device, the board for the piezoelectric device, and a surface acoustic wave device using this. <P>SOLUTION: The manufacturing method of the board for the piezoelectric device comprises: growing a La<SB>3</SB>Ga<SB>5</SB>SiO<SB>14</SB>single crystal; and processing it into the board for the piezoelectric device, wherein the weighing is carried out in the composition range that La<SB>2</SB>O<SB>3</SB>is from 48.06 to 48.80 wt.%, Ga<SB>2</SB>O<SB>3</SB>is from 45.25 to 46.60 wt.% and SiO<SB>2</SB>is from 5.21 to 6.19 wt.%, the weighed object is molten in a crucible 1, and the single crystal C of La<SB>3</SB>Ga<SB>5</SB>SiO<SB>14</SB>is pulled from the crucible and grown. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
