发明名称 CHARGE PUMP CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To obtain a charge pump circuit with a dead zone reduced which operates at high speed by preventing variation in the gate potential of a current source Tr (transistor) and making the rise time of output current small even when an up signal and a down signal input to the charge pump circuit have short pulses. <P>SOLUTION: Connection destinations of source terminals are switched so as to make the amount of an increase in a potential at one source terminal and the amount of a decrease in a potential at the other source terminal almost equal between a charging current source Tr and a charging dummy Tr which have almost equal capacity between respective gate and source, while being biased to respective gate terminals in common, drain terminals of the charging current source Tr and a discharging current source Tr are connected to each other to be an output terminal, the discharging current source Tr and a discharging dummy Tr form a discharging circuit in a manner similar to a charging circuit, and connection destinations of source terminals are switched so as to make the amount of an increase in a potential at one source terminal and the amount of a decrease in a potential at the other source terminal almost equal. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007180954(A) 申请公布日期 2007.07.12
申请号 JP20050377639 申请日期 2005.12.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUTSUMI TSUNEJI;SUEMATSU KENJI;KOIDE JUN
分类号 H03L7/093 主分类号 H03L7/093
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