发明名称 |
Switching power supply device and a semiconductor integrated circuit |
摘要 |
The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M 1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
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申请公布号 |
US2007159150(A1) |
申请公布日期 |
2007.07.12 |
申请号 |
US20050587215 |
申请日期 |
2005.01.14 |
申请人 |
HOSOKAWA KYOICHI;KUDO RYOTARO;NAGASAWA TOSHIO;TATENO KOJI |
发明人 |
HOSOKAWA KYOICHI;KUDO RYOTARO;NAGASAWA TOSHIO;TATENO KOJI |
分类号 |
G05F1/00;H02M3/158;H03F3/217;H03K17/06;H03K17/687 |
主分类号 |
G05F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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