发明名称 |
Semiconductor device with multiple channels and method of fabricating the same |
摘要 |
A semiconductor device with multiple channels includes a semiconductor substrate and a pair of conductive regions spaced apart from each other on the semiconductor substrate and having sidewalls that face to each other. A partial insulation layer is disposed on the semiconductor substrate between the conductive regions. A channel layer in the form of at least two bridges contacts the partial insulation layer, the at least two bridges being spaced apart from each other in a first direction and connecting the conductive regions with each other in a second direction that is at an angle relative to the first direction. A gate insulation layer is on the channel layer, and a gate electrode layer on the gate insulation layer and surrounding a portion of the channel layer.
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申请公布号 |
US2007158679(A1) |
申请公布日期 |
2007.07.12 |
申请号 |
US20060517211 |
申请日期 |
2006.09.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LI MING;YEO KYOUNG-HWAN;KIM SUNG-MIN;SUK SUNG-DAE;KIM DONG-WON |
分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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