发明名称 |
Power gating structure, semiconductor including the same and method of controlling a power gating |
摘要 |
A power gating structure controls a connection between a power supply terminal and a virtual power supply node so as to operate a logic circuit in a plurality of operation modes. The power gating structure includes a first path and a second path. In an active mode, the first path electrically couples the power supply terminal with the virtual power supply node in response to a first control signal. In a data retention mode, the second path electrically couples the power supply terminal with the virtual power supply node in response to the first control signal and a second control signal with a predetermined voltage level difference. In a power-down mode, both the first path and the second path electrically isolate the power supply terminal from the virtual power supply node in response to the first control signal and the second control signal.
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申请公布号 |
US2007159239(A1) |
申请公布日期 |
2007.07.12 |
申请号 |
US20070649050 |
申请日期 |
2007.01.03 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
RHEE YOUNG-CHUL |
分类号 |
G05F1/10 |
主分类号 |
G05F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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