COMPOSITE FOR ORGANIC SEMICONDUCTOR LAYER, METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING ACTIVE MATRIX DEVICE, METHOD OF MANUFACTURING ELECTROOPTICAL DEVICE, AND METHOD OF MANUFACTURING ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a composite for an organic semiconductor layer which has high planarity of molecular structure and can manufacture an organic semiconductor layer excellent in thin film characteristics, a method of manufacturing a thin-film transistor which can manufacture a highly reliable thin-film transistor manufactured using this method, a method of manufacturing an active matrix, a method of manufacturing an electrooptical device, and a method of manufacturing electronic equipment. SOLUTION: The composite for the organic semiconductor layer contains an organic semiconductor material having a principal chain containing aπconjugate system structure and a side chain, and satisfying predetermined conditions; and a solvent having a second virial coefficient of -1×10-3to 1×10-3(cm3mol)/g2for this material. For example, when poly(3-hexylthiophene) is used as the organic semiconductor material, anisole or trichloroethane can be used as the solvent. This composite can be used for forming an organic semiconductor layer 30 of a thin-film transistor 1 having a gate electrode 50, a gate insulation layer 40, a source electrode 20a, a drain electrode 20b, and the organic semiconductor layer 30. COPYRIGHT: (C)2007,JPO&INPIT